Conference Agenda

Growth Dynamics and Surface Morphology of AlGaAsBi Alloys for Low-Noise Avalanche Photodiode Applications

Verónica Braza Blanco¹, Teresa Ben¹, Daniel F. Reyes¹, Nicholas J. Bailey², Matthew R. Carr², Robert D. Richards², David Gonzalez¹

1: University Research Institute on Electron Microscopy & Materials, (IMEYMAT). University of Cadiz, Puerto Real (Cádiz) 11510. Spain.; 2: The University of Sheffield, School of Electrical and Electronic Engineering, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, UK

Structural characteristics of β‐Ga2O3 films deposited by MOVPE on 4H-SiC templates

Roberto Fornari^1,3, Gianfranco Sfuncia², Corrado Bongiorno², Giuseppe Nicotra², Matteo Bosi³, Luca Seravalli³, Francesco Mezzadri⁴, Antonella Parisini¹, Nadia Licciardello⁵, Davide Patti⁵, Delfo Sanfilippo⁵

1: Dept. SMFI, University of Parma, Italy; 2: CNR-IMM Institute, Catania, Italy; 3: CNR-IMEM Institute, Parma, Italy; 4: Dept. SCVSA, University of Parma, Italy; 5: STMicroelectronics, Catania, Italy

Backscattered electron microscopy for the characterization of III-V semiconductor nanowires: challenges and opportunities

Paula Mouriño¹, Laura Monge-Bartolomé¹, Jovana Obradović², Mariia Lamers³, Sebastian Lehmann³, Miguel Sinusia Lozano¹, Žarko Gačević², Kimberly A. Dick⁴, Magnus T. Borgstrom³, Víctor J. Gómez¹

1: Nanophotonics Technology Center, Universitat Politècnica de València, Spain; 2: Institute for Optoelectronic Systems and Microtechnology (ISOM), Universidad Politécnica de Madrid, Spain; 3: Solid State Physics and NanoLund, Lund University, Sweden; 4: Centre for Analysis and Synthesis and NanoLund, Lund University, Sweden

Quantification of the segregation in InAs/AlSb triple barrier resonant-tunneling

Francisco Alvarado Cesar¹, Peter Hodgson², Manus Hayne², Teresa Ben³, Verónica Braza³, Daniel F. Reyes³, David González³, Richard Beanland¹

1: University of Warwick, United Kingdom; 2: Lancaster University, United Kingdom; 3: Universidad de Cádiz, Spain

Electron Channelling Contrast Imaging for the characterization of dislocations in III-V thin films on Silicon (001)

Laura Monge Bartolome¹, Paula Mouriño Miñambres¹, Alicia Peiro Codoñer¹, Miguel Sinusia Lozano¹, Zao Yan², Ivan Garcia Vara³, Thierry Baron⁴, Qiang Li², Victor J. Gomez¹

1: Nanophotonics Technology Center, Universitat Politècnica de València, Valencia 46022, Spain; 2: School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, United Kingdom; 3: Instituto de Energía Solar, Universidad Politécnica de Madrid, Madrid, Spain; 4: Univ. Grenoble Alpes, CNRS, CEA-LETI, LTM, 38054, Grenoble, France

Shaping the Future of GaN Crystal Growth Technology

Michał Boćkowski

Institute of High Pressure Physics Polish Academy of Sciences,, Poland

In-situ observation of the homogenization and decomposition of the InGaN Quantum Wells

Mike Leszczynski¹, Ewa Grzanka¹, Artur Lachowski¹, Szymon Grzanka¹, Robert Czernecki¹, Sondes Bauer², Tilo Baumbach²

1: Institute of High Pressure Physics, Poland; 2: Karlsruhe Institute of Technology, Germany

Numerical and analytical models for (111) 3C-SiC double clamped beams

Annamaria Muoio¹, Angela Garofalo^1,2, Saverio De Luca¹, Sergio Sapienza³, Matteo Ferri³, Luca Belsito³, Alberto Roncaglia³, Francesco La Via¹

1: CNR-IMM Catania, Italy; 2: Material Science Department University Milano-Bicocca, Italy; 3: CNR-ISMN Bologna, Italy

Effects on 4H-SiC of thermal annealing at high pressure of Oxygen or Helium

Gianmarco Laurella¹, Francesca Migliore¹, Marco Cannas¹, Franco Gelardi¹, Corrado Coccorese², Massimo Boscaglia², Massimo Davide Pirnaci², Simonpietro Agnello³

1: Department of Physics and Chemistry, University of Palermo, Palermo (Italy); 2: STMicroelectronics, Catania (Italy); 3: AtenCenter, University of Palermo, Palermo (Italy)

Strain Engineering for β-Ga2O3 Nanostructures: Ion-beam-exfoliated Microtubes & Nanomembranes

Duarte Magalhães Esteves^1,2, Ru He³, Calliope Bazioti⁴, Sérgio Magalhães^2,5, Miguel Carvalho Sequeira⁶, Luís Filipe Santos⁷, Alexander Azarov⁴, Andrej Kuznetsov⁴, Flyura Djurabekova³, Katharina Lorenz^1,2,5, Marco Peres^1,2,5

1: INESC MN, Lisbon, Portugal; 2: IPFN, Instituto Superior Técnico, University of Lisbon, Portugal; 3: Department of Physics, University of Helsinki, Finland; 4: Department of Physics and Centre for Materials Science and Nanotechnology, University of Oslo, Norway; 5: Department of Nuclear Sciences and Engineering, Instituto Superior Técnico, University of Lisbon, Portugal; 6: Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany; 7: Centre for Structural Chemistry, Institute of Molecular Sciences and Department of Chemical Engineering, Instituto Superior Técnico, University of Lisbon, Portugal

From wurtzite to zinc blende phase and vice versa in catalyst-free GaN nanowires

Bruno DAUDIN¹, Corentin GUERIN^1,2, Fabien JOURDAN¹, Bruno GAYRAL¹, Jean-Luc ROUVIERE¹, Gwénolé JACOPIN²

1: CEA-Grenoble, France; 2: CNRS-Institut Néel, France

Fast Growth of Strained α-Fe2O3 Nanowires by Joule-Heating

Diego José Ramos-Ramos, Geraldo Cristian Vásquez, David Maestre

Complutense University of Madrid, Spain

Nanoscale Correlative X-ray Study of Hybrid Semiconductor Nanowire Architectures

Jaime Dolado¹, Edoardo Zatterin¹, Valentina Bonino¹, Ruth Martínez-Casado², Emilio Nogales², Pedro Hidalgo², Bianchi Méndez², Gema Martínez-Criado^1,3

1: European Synchrotron Radiation Facility (ESRF), France; 2: Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, 28040-Madrid, Spain; 3: Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, 28049 Cantoblanco, Spain

Resistive heating of Mo wires to produce MoO3 nanostructures: simulations and experiments

Beatriz Rodríguez Fernández, Pedro Hidalgo Alcalde, Bianchi Méndez Martín

Complutense University of Madrid, Spain

Impact of Growth Interruptions on InAs/GaAsBi Quantum Dots: Unveiling Three-Phase Nanoparticle Formation.

Daniel F. Reyes¹, Sara Flores¹, Veronica Braza¹, Teresa Ben¹, Nicholas J. Bailey², Matthew R. Carr², Jesus Hernandez-Saz³, Robert D. Richards², David González¹

1: University Research Institute on Electron Microscopy & Materials, (IMEYMAT). University of Cadiz, Puerto Real (Cádiz), Spain.; 2: University of Sheffield, School of Electrical and Electronic Engineering, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, UK.; 3: Departamento de Ingeniería y Ciencia de los Materiales y del Transporte, Universidad de Sevilla, Sevilla, Spain.

Synthesis of graphene-nanoparticles nanocomposites via plasma at atmospheric pressure

Rocío Pérez-Portero, Antonio Cobos-Luque, Francisco J. Morales-Calero, José Muñoz, Andrés M. Raya, Rocío Rincón

Universidad de Córdoba, Spain

Dilute-Nitride Nanostructures Tailor-made for Room-Temperature Opto-Spintronics

Y.Q. Huang¹, V Polojärvi², P Höjer¹, A Aho², R Isoaho², T Hakkarainen², M Guina², I.A. Buynaova¹, W.M. Chen¹

1: Linköping University, Sweden; 2: Tampere University, Finland

Insight into the mechanism of lattice damage in ground and polished InAs substrates

Guiying Shen

the Institute of Semiconductors, CAS, China, People's Republic of

Effects of Bi Incorporation on Recombination Processes in GaAs/GaAsBi Core/Shell Nanowires

M. Jansson¹, V. V. Nosenko¹, G. Yu. Rudko¹, F. Ishikawa², W. M. Chen¹, Irina A. Buyanova¹

1: Linköping University, Sweden; 2: Hokkaido University, Japan

NiO/k-Ga2O3 heterojunctions as self-powered broadband ultraviolet photodiodes

Abderrahim Moumen^1,2, Payam Rajabi Kalvani¹, Francesco Mattei¹, Gianluca Foti¹, Roberto Mosca², Antonella Parisini¹, Maura Pavesi¹, Matteo Bosi², Luca Seravalli², Francesco Mezzadri³, Andrea Baraldi¹, Piero Mazzolini^1,2, Salvatore Vantaggio¹, Alessio Bosio¹, Roberto Fornari^1,2

1: Dept. SMFI, University of Parma, Italy; 2: CNR-IMEM Institute, Parma, Italy; 3: Dept. SCVSA, University of Parma, Italy

Development of ScAlN/GaN High Electron Mobility Transistor on silicon substrate for RF applications

Seif El Whibi¹, Nagesh Bhat¹, Yassine Fouzi¹, Nicolas Defrance¹, Zahia Bougrioua¹, Jean-Claude De Jaeger¹, Florian Bartoli², Maxime Hugues², Yvon Cordier², Marie Lesecq¹

1: IEMN - CNRS, France; 2: CRHEA -CNRS, France

Compact and planar NiO/β-Ga₂O₃ heterojunction photodiode for highly-selective UV-C detection in self-powered mode

Abderrahim Moumen^1,2, Payam Rajabi Kalvani^1,2, Francesco Mattei¹, Gianluca Foti¹, Roberto Mosca², Antonella Parisini¹, Maura Pavesi¹, Matteo Bosi², Luca Seravalli², Francesco Mezzadri³, Andrea Baraldi¹, Piero Mazzolini^1,2, Salvatore Vantaggio¹, Alessio Bosio¹, Roberto Fornari^1,2

1: Dept. of Mathematical, Physical and Computer Sciences, University of Parma, Italy; 2: CNR-IMEM Institute, Parma, Italy; 3: Dept. of Chemistry, Life Sciences and Environmental Sustainability, University of Parma, Italy

Reactive sputter deposition of gallium oxynitride thin films

Marcell Gajdics, György Sáfrán, Béla Pécz

HUN-REN Centre for Energy Research, Hungary

Hybrid AI-Thermal Modelling of Self-Heating in GaN HEMTs Trained with Monte Carlo Simulations

Sergio García-Sánchez, Jorge Carrera, Ignacio Íñiguez-de-la-Torre, Javier Mateos, Tomás González

Universidad de Salamanca, Spain

Structural and compositional study of thermal oxidation of thin GaSe layers

Uriel López¹, Teresa Ben¹, Guillermo Bárcena², Natham Cottam³, Mustaqeen Shiffa³, Tin S. Cheng³, Sergei V. Novikov³, Amalia Patané³, David Gonzalez¹

1: University Research Institute on Electron Microscopy and Materials (IMEYMAT). University of Cadiz, Puerto Real (Cádiz) 11510. Spain.; 2: Department of Informatic Engineering, University Cádiz. Spain.; 3: School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK

Optimization of n++GaN Cap Surface via Digital Etching for InAlN/GaN E/D-Mode MOS HEMTs

Ondrej Pohorelec, Dagmar Gregušová, Michal Blaho, Andrii Kozak, Boris Hudec, Roman Stoklas, Ján Kuzmík

Institute of Electrical Engineering, Slovak Academy of Sciences, Slovak Republic

Homoepitaxial growth of β-Ga2O3 by MOVPE

Andreas Popp, Ta-Shun Chou, Saud Bin Anooz, Jana Rehm, Arub Akhtar, Zbigniew Galazka, Andreas Fiedler, Martin Albrecht

LEIBNIZ-INSTITUT FÜR KRISTALLZÜCHTUNG im Forschungsverbund Berlin e.V., Germany

Study of optical anisotropy and polarization effects in β-Ga2O3 by X-ray excited optical luminescence

Paula Pérez-Peinado¹, Jaime Dolado², Pedro Luis Alcázar^1,3, Daniel Carrasco¹, Ruth Martínez-Casado¹, Valentina Bonino², Gema Martínez-Criado², Jani Jesenovec⁴, John Stuart McCloy⁴, Francisco Domínguez-Adame¹, Jorge Quereda³, Emilio Nogales¹, Bianchi Méndez¹

1: Departamento de Física de Materiales, Universidad Complutense de Madrid, Spain; 2: European Synchrotron Radiation Facility, ESRF, Grenoble, France; 3: 2D Foundry Group. Instituto de Ciencia de Materiales de Madrid, Spain; 4: Institute of Materials Research, Washington State University, USA

AlScN barrier HEMTs grown by NH3-MBE with AlN and GaN cap layers

Valentina Gallardo-Mödinger, Florian Bartoli, Aimeric Courville, Maxime Hugues, Yvon Cordier

Université Côte d'Azur, France

Diamond/AlN/diamond heterostructure

Lucía Nieto Sierra¹, Fernando Lloret¹, Juan Jesús Gallardo¹, Rozita Rouzbahani², Laura Mazón-Maldonado³, Carlos García Núñez³, Daniel Araujo¹

1: University of Cádiz, Spain; 2: Hasselt University, Belgium; 3: University of Glasgow, Glasgow, United Kingdom

Inter-die Hybrid Cu/Diamond Microbump Bonding for 3D Heterogeneous Integration

Zhengwei Chen¹, Shusmitha Kyatam², Keyu Wang¹, Noah Opondo¹, Miguel A. Neto³, Ricardo Oliveira², Jie Li¹, Tiwei Wei¹, Joana Catarina Mendes²

1: Birck Nanotechnology Center and School of Mechanical Engineering, Purdue University, USA; 2: Instituto de Telecomunicações, University of Aveiro, Portugal; 3: CICECO – Aveiro Institute of Materials, Department of Materials and Ceramic Engineering, University of Aveiro, Portugal

Assessment of diamond substrates by time of flight electron beam induced current

Julien Pernot

Univ. Grenoble Alpes, France

Is CVD diamond (soon?) ready to become an electronic material?

Philippe Bergonzo

Seki Diamond Systems, Cornes Technologies USA, USA

Influence of Growth Temperature and Scandium Concentration on the Surface Oxidation of ScAlN Films Grown by Molecular Beam Epitaxy

Valentina Gallardo Mödinger¹, Frédéric Georgi², Ileana Florea¹, Xavier Wallart³, Philippe Vennéguès¹, Yvon Cordier¹, Maxime Hugues¹

1: Université Côte d’Azur, CNRS, CRHEA, rue B. Gregory, 06560 Valbonne, France; 2: Mines Paris, PSL University, Center for Material Forming (CEMEF), UMR CNRS, 06904 Sophia Antipolis, France; 3: University Lille, CNRS, Centrale Lille, Junia, University Polytechnique Hauts de France, UMR 8520-IEMN, F59000 Lille, France

On the rapid thermal annealing of AlN thin films for piezoelectric MEMS

Laura Mazón-Maldonado¹, Lucía Nieto-Sierra², Des Gibson³, Roghaieh Parvizi¹, Hadi Heidari¹, Carlos Garcia Nuñez¹

1: Microelectronics Lab (meLAB), James Watt School of Engineering, University of Glasgow, UK; 2: Department of Material Sciences, Metallurgical Engineering and Inorganic Chemistry, University of Cádiz, Spain; 3: Institute of Thin Films, Sensors and Imaging, University of the West of Scotland, UK

AlGaN growth for FinFET devices

Pawel Prystawko¹, Adamantia Logotheti^2,3, Navya Sri Garigapati^4,5, Izabella Grzegory¹, Vanya Darakchieva^2,6, Erik Lind⁴

1: Institute of High Pressure Physics, PAS, Poland; 2: Center for III-Nitride Technology, C3NiT-Janzén, Solid State Physics and NanoLund, Lund University, Sweden; 3: Volvo Cars Corporation, Greater Gothenburg Metropolitan Area, Sweden; 4: Department of Electrical and Information Technology and NanoLund, Lund University, Sweden; 5: Hexagem AB, Sweden; 6: Center for III-Nitride Technology, C3NiT-Janzén, Department of Physics, Chemistry and Biology (IFM), Linköping University, Sweden

Bandgap-Engineered III-V-N Superlattices for Monolithic Tandem Solar Cells Lattice-Matched to Si

Carlos Macías, Ainhoa Orte-Ortega, Jose María Ulloa, Sergio Fernández-Garrido

Instituto de Sistemas Optoelectrónicos y Microtecnología, Spain

13mW/µm² and 24% PAE at 94GHz for 0.44-um Transferred InP/GaAsSb DHBT on Si

Abdelmalek Zemour^1,2, Malek Zegaoui¹, Yannick Roelens¹, Etienne Okada¹, Pascal Chevalier², Mohammed Zaknoune¹

1: IEMN, France; 2: STMicroelectronics, Crolles, 38920, France

Vacancies in NiO: DFT Study for Optoelectronic Applications

Felipe Bermúdez-Mendoza, Diego J. Ramos-Ramos, Cristian G. Vásquez, David Maestre, Francisco Domínguez-Adame, Bianchi Méndez, Ruth Martínez-Casado, Elena Díaz

Universidad Complutense de Madrid, Spain

Simulation and Analysis of MOVPE Grown III-V PIN Diodes for RF Applications

Simeon Nikolaev Vladimirov, Iván García, Ignacio Rey-Stolle

Universidad Politécnica de Madrid, Spain

Fabrication and monitoring of quantum emitters in Aluminium Nitride via Al-ion implantation and thermal annealing

Elena Nieto Hernández^1,2, Hüseyin Bilge Yağcı^3,4, Vanna Pugliese^1,2, Emilio Corte^1,2, Pietro Aprà^1,2, Joseph K. Cannon^3,4, Sam G. Bishop^3,4, John P. Hadden^3,4, Sviatoslav Ditalia Tchernij^1,2, Paolo Olivero^1,2, Anthony J. Bennett^3,4, Jacopo Forneris^1,2

1: Dipartimento di Fisica, Università di Torino, via Pietro Giuria 1, Torino 10125, Italy; 2: Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Torino, via Pietro Giuria 1, Torino 10125 Italy; 3: School of Engineering, Cardiff University, Queen’s Building, The Parade, Cardiff CF24 3AA, United Kingdom; 4: Translational Research Hub, Cardiff University, Maindy Road, Cathays, Cardiff CF24 4HQ, United Kingdom

Novel Ion Detection Strategy for Deterministic Implantation Using an Ultra-Thin Silicon Carbide Membrane Detector

Enrico Sangregorio¹, Andreo Crnjac², Lucia Calcagno³

1: National Research Council of Italy - Institute for Microelectronics and Microsystems, Italy; 2: Division of Experimental Physics, Ruđer Bošković Institute; 3: Department of Physics and Astronomy “Ettore Majorana”, University of Catania

Co-Integration of High-Frequency Devices on Epitaxial ScAlN for Tunable RF SAW Filters

Nagesh Bhat¹, Seif El-whibi¹, Edouard Lebouvier¹, Nicolas Defrance¹, Jean-Claude De Jaeger¹, Zahia Bougrioua¹, Florian Bartoli², Valentina Gallardo-Mödinger², Maxime Hugues², Yvon Cordier², Sami Hage-Ali³, Ulrich Youbi³, Thierry Aubert³, Omar Elmazria³, Marie Lesecq¹

1: Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, UMR 8520 – IEMN-Institut d’Electronique de Microélectronique et de Nanotechnologie, F-59000, Lille, France; 2: Université Côte d’Azur, CNRS, CRHEA, rue B. Gregory, 06560 Valbonne, France; 3: Université de Lorraine - CNRS, Institut Jean Lamour UMR 7198, Nancy,54000, France

Study of RF-sputtered Ga₂O₃ Thin Films for DUV Photodetectors

Ana Sofia Sousa^1,2, Duarte M. Esteves^2,3, Tiago T. Robalo⁴, Mário S. Rodrigues⁴, Luís F. Santos⁵, Reinhard Schwarz^1,6, Katharina Lorenz^1,2,3, Marco Peres^1,2,3

1: Instituto Superior Técnico, University of Lisbon, Portugal; 2: INESC Microsystems and Nanotechnology, Lisbon, Portugal; 3: IPFN, Instituto Superior Técnico, University of Lisbon, Portugal; 4: Departamento de Física and BioISI – BioSystems and Integrative Sciences Institute, Faculdade de Ciências, University of Lisbon, Portugal; 5: Centro de Química Estrutural, Institute of Molecular Sciences and Departamento de Engenharia Química, Instituto Superior Técnico, University of Lisbon, Portugal; 6: CeFEMA, Instituto Superior Técnico, University of Lisbon, Portugal

Formation and modification of Ag and Au nanoparticles created by ion implantation in Ga2O3 thin films

Inês Freitas^1,2, Ana Sofia Sousa^1,2, Duarte Magalhães Esteves^1,2,3, Ângelo Rafael Granadeiro da Costa^1,4, Joana Madureira^1,4,5, Sandra Cabo Verde^1,4,5, Karla Ivanković Nizić⁶, Toni Dunatov⁶, Georgios Provatas⁶, Katharina Lorenz^1,2,3,5, Marco Peres^1,2,3,5

1: Instituto Superior Técnico, University of Lisbon and INESC MN, Portugal; 2: INESC MN, Lisbon, Portugal; 3: IPFN, Instituto Superior Técnico, University of Lisbon, Portugal; 4: C2TN, Instituto Superior Técnico, University of Lisbon, Portugal; 5: DECN, Instituto Superior Técnico, University of Lisbon, Portugal; 6: Division of Experimental Physics, Ruđer Bošković Institute, Bijenička cesta 54, Zagreb, Croatia

Swift Heavy Ion irradiation of GaN and AlGaN Semiconductors

Belarmino Tavares^1,2, Duarte Esteves^1,2, Katharina Lorenz^1,2,3, Marco Peres^1,2,3, Sérgio Magalhães^2,3, Miguel Sequeira^3,4, Isabelle Monnet⁵, Clara Grygiel⁵, Florent Moisy⁵, Mamour Sall⁵

1: INESC MN, Lisboa, 1000-029 Portugal; 2: Instituto Superior Técnico, University of Lisbon, Lisboa, Portugal; 3: IPFN, Instituto Superior Técnico, University of Lisbon , Campus Tecnológico e Nuclear, Lisboa, Portugal; 4: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Germany; 5: CIMAP (CEA, CNRS, ENSICAEN, UCN), Caen, France

Proton beam imaging using GaN detector array

Maxime Hugues¹, Matilde Siviero¹, Lucas Lesourd¹, Nicolas Couret¹, Eric Frayssinet¹, Shirley Prado De La Cruz¹, Sébastien Chenot¹, Marie Vidal², Petter Hofverberg², Joël Hérault², Nico Brosda³, Andreas Wieck³, Stephane Higueret⁴, Jean-Yves Duboz¹

1: Université Côte d’Azur, CNRS-CRHEA; 2: Institut Méditerranéen de ProtonThérapie – Centre Antoine Lacassagne; 3: Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum; 4: IPHC-CNRS

Multiscale characterization of silicon carbide (4H-SiC) after sulfurization treatments

Fabrizio Roccaforte¹, Salvatore Ethan Panasci¹, Marilena Vivona¹, Giuseppe Greco¹, Patrick Fiorenza¹, Attila Sulyok², Antal Koos², Béla Pècz², Filippo Giannazzo¹

1: Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi (CNR-IMM), Z.I. VIII Strada 5, 95121 Catania, Italy; 2: HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary

Scalable growth of optically uniform MoWS2 alloys by sulfurization of ultrathin Mo/W films

Salvatore Ethan Panasci¹, Emanuela Schilirò¹, Antal Koos², Tayfun Kutlu³, Hasan Sahin³, Fabrizio Roccaforte¹, Béla Pècz², Filippo Giannazzo¹

1: Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi (CNR-IMM), Z.I. VIII Strada 5, 95121 Catania, Italy; 2: HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; 3: Department of Photonics Izmir Institute of Technology, 35430 Izmir, Turkiye

Ohmic contacts on phosphorus-doped diamond fabricated by FIB transformation and surface Ga+ implantation

Gabriel Mesas Peña¹, Fernando Lloret^1,2, Antonio Freire de Rivas¹, Josué Millán-Barba^2,3, Gonzalo Alba^1,2, Mariko Suzuki⁴, M. Pilar Villar Villar^2,3, Daniel Araujo^2,3

1: Department of Applied Physics, University of Cádiz, 11510 Puerto Real, Spain; 2: IMEYMAT, University of Cádiz, 11510 Puerto Real, Spain; 3: Department of Material Science, University of Cádiz, 11510 Puerto Real, Spain; 4: Orbray Co., Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo, 123-8511 Japan.

Structural study of ZnOthin films obtained by plasma assisted magnetron sputtering

Isabel Maria Casal Arazola¹, Michael McKinlay², Carlos Garcia Nuñez², Lucia Nieto Sierra¹, Gonzalo Alba^3,4, M.Pilar Villar^1,3

1: Dpto. Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510-Puerto Real,Spain; 2: MicroelectronicsLab, James Watt SchoolofEngineering, Universityof Glasgow, G12 8QQ Glasgow, UK; 3: IMEYMAT, UCA, Spain; 4: Dpto. Física Aplicada, Universidad de Cádiz, 11510-Puerto Real, Spain

Graphene Powder Synthesized via Microwave Plasma at Atmospheric Pressure as a Multifunctional Material for Compound Semiconductor Applications

Francisco J. Morales-Calero, Antonio Cobos-Luque, Andrés M. Raya Bejarano, José Muñoz Espadero, Rocío Pérez Portero, Kevin Pareja Ruiz, Norma Y. Mendoza-González, Jorge A. Alcusón Belloso, María Dolores Calzada Canalejo, Rocío Rincón Liévana

Laboratory of Innovation in Plasmas, Universidad de Córdoba, Spain

Epitaxial BN: growth, properties and applications

Andrzej Wysmolek

University of Warsaw, Poland

Effect of Silicon and Oxygen Pre-Implantation on Thermal Oxidation of 4H-SiC

Enrico Sangregorio¹, Fulvio Mazzamuto², Christina Sohl², Luke Kim², Corrado Bongiorno¹, Francesco La Via¹

1: National Research Council of Italy - Institute for Microelectronics and Microsystems, Italy; 2: Axcelis Technologies, Inc.

Vacancy complexes and clusters in MOVPE grown nitride layers and heterostructures

Alice Hospodková¹, Jakub Čížek², František Hájek¹, Jiří Pangrác¹, Tomáš Hubáček¹, Karla Kuldova¹

1: FZU - Institute of Physics, CAS, Czech Republic; 2: 2 Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 180 00 Prague, Czech Republik

Study of building blocks for the fabrication of high breakdown voltage GaN diodes by selective area epitaxy

Thibaud Guillemin¹, Ali Izi², Adama Seck², Sébastien Chenot¹, Ndembi Ignoumba-Ignoumba³, Mohammed El Amrani⁴, Dominique Planson³, Camille Sonneville³, Hassan Maher², Yvon Cordier¹, Matthew Charles⁴

1: Univ. Côte d’Azur, CNRS, CRHEA; 2: Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS; 3: INSA Lyon, Ecole Centrale de Lyon, CNRS, Université Claude Bernard Lyon 1; 4: Univ. Grenoble Alpes, CEA, LETI

High-Resolution Cathodoluminescence Mapping for Doping Quantification Across a Wide Range of Silicon Concentrations in GaN Epitaxial Layers

Zakariae M'QADDEM¹, Névine Rochat¹, Gwénolé Jacopin², Blend Mohamad¹, Thomas Kaltsounis¹, Marc VEILLEROT¹, Matthew Charles¹, Julien Buckley¹, Łukasz Borowik¹

1: Univ. Grenoble Alpes, CEA-LETI, Grenoble 38000, France; 2: Universite Grenoble Alpes, CNRS, Grenoble INP, Institut Neel, 38000 Grenoble, France

Fabrication of red LEDs with patterned GaN nanowires doped with Europium

Alvaro Revilla-Martín¹, Corentin Guérin², Fabien Jourdan², Gwénolé Jacopin¹, Bruno Gayral², Bruno Daudin²

1: CNRS/Institut Neel, France; 2: CEA/IRIG/PHELIQS/NPSC, France

Ferroelectricity in III-N based Semiconductors: New Paradigms for Material and Device Design

Simon Fichtner

Technische Fakultät Universität Kiel, Germany

Optimization of Regrown GaN Quasi-Vertical pn Diodes by Low-Power CF4 Plasma and in-situ TMGa Treatment

Qi Shu¹, Arno Kirchbrücher¹, Arne Debald², Michael Heuken^1,2, Holger Kalisch¹, Andrei Vescan¹

1: RWTH Aachen, Germany; 2: AIXTRON SE

Study of Annealing Temperature Effects on Pt-GaN Schottky Diode Characteristics

Beatriz Orfao¹, Amir Al Abdallah^1,3, Hugo bouillaud¹, Yannick Roelens¹, Malek Zegaoui², Mohammed Zaknoune¹

1: IEMN-CNRS, France; 2: Research Institute on software and hardware devices for information and Advanced communication, France; 3: LERMA-CNRS, Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres, Paris observatory, France

RF Detection Performance of GaN Devices: Measurements and Modelling

Tomás González¹, Ignacio Íñiguez-de-la-Torre¹, Gaudencio Paz-Martínez¹, Philippe Artillan², Beatriz Orfao³, Héctor Sánchez-Martín¹, Sergio García-Sánchez¹, Javier Mateos¹

1: Universidad de Salamanca, Spain; 2: Univ. Savoie Mont Blanc, France; 3: Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN), France

Perimeter and area gate leakage current in p-GaN HEMTs

Giuseppe Greco¹, Simone Milazzo^1,2, Patrick Fiorenza¹, Filippo Giannazzo¹, Giovanni Giorgino³, Cristina Miccoli³, Eloisa Castagna³, Salvo Mirabella⁴, Ferdinando Iucolano³, Fabrizio Roccaforte¹

1: CNR-IMM, Catania (Italy); 2: Department of Chemical Sciences, University of Catania (Italy); 3: STMicroelectronics, Catania (Italy); 4: Department of Physics and Astronomy “Ettore Majorana”, University of Catania (Italy)

Insights from Raman Spectroscopy on the Structural and Optical Properties of Semiconductors for Light Emitters and Photovoltaics

Maria Rosário P. Correia

University of Aveiro, Portugal

Neural Network-Based Calibration of Electrical Models for Silicon Carbide Diodes

Mohammed Amira, Aleš Chvála

Slovak University of Technology in Bratislava, Slovak Republic

β-Ga2O3 nanomembrane devices obtained by ion-beam-assisted exfoliation

Miguel Cardoso Pedro^1,2, Duarte Magalhães Esteves^1,2,3, Ana Sofia Sousa^1,3, Luís Cerqueira Alves^3,4,5, Katharina Lorenz^1,2,3,5, Marco Peres^1,2,3,5

1: INESC MN, Portugal; 2: IPFN, Instituto Superior Técnico, University of Lisbon, Portugal; 3: Instituto Superior Técnico, University of Lisbon, Portugal; 4: C2TN, Instituto Superior Técnico, University of Lisbon, Portugal; 5: DECN, Instituto Superior Técnico, University of Lisbon, Portugal

Optical and Electron Beam Characterization of a Stacked Diode CMOS Sensor for Energy-Resolved Imaging

Jorge J. Sáenz-Noval¹, Juan A. Leñero-Bardallo², Lionel Cervera Gontard¹

1: University of Cádiz, Spain; 2: Instituto de Microelectrónica de Sevilla (IMSE-CNM), CNM (CSIC, Universidad de Sevilla)

Development of Tribophotonic Devices for Electro-optical Modulation

Michael McKinlay¹, Anna Karoline Rüsseler^2,3, Lewis Fleming⁴, Hadi Heidari¹, Des Gibson⁴, Andreas Wienke^2,3, Carlos García Núñez¹

1: Microelectronics Lab, James Watt School of Engineering, University of Glasgow, G12 8QQ Glasgow, UK; 2: Laser Zentrum Hannover e.V., Hollerithallee 8, D-30419 Hannover, Germany; 3: Leibniz University Hannover, Cluster of Excellence PhoenixD, Welfengarten 1A, D-30167 Hannover, Germany; 4: Institute of Thin Films, Sensors and Imaging, University of the West of Scotland, PA1 2BE Paisley, U.K

Robust Performance of Molybdenum-GaN Schottky Diodes After 850 °C Annealing Exhibiting High Breakdown Voltage and Minimal ON Resistance

Amir Al Abdallah^1,3, Malek Zegaoui², Beatriz Orfao¹, Yannick Roelens¹, Jeanne Treuttel³, Martina Wiedner³, Mohammed Zaknoune¹

1: Institut d’Electronique de Microélectronique et de Nanotechnologie, Lille, France; 2: Research Institute on software and hardware devices for information and Advanced communication, Lille, France; 3: Laboratory for Instrumentation and Research in Astrophysics, Paris Observatory, France

New optical gate configuration for FET device

José Luis Cruces Romano¹, Fernando Lloret², Gonzalo Alba², Rodrigo Alcántara³, Javier Navas³, David Eon⁴, Daniel Araujo¹

1: Departament of Materials Science. University of Cádiz, 11510, Puerto Real, Spain; 2: Departament of Applied of Physics. University of Cádiz, 11510, Puerto real, Spain; 3: Departament of Physical Chemistry. University of Cádiz, 11510, Puerto real, Spain; 4: Institut Néel, CNRS, Grenoble INP. University of Grenoble Alpes, 38000, Grenoble, France

Alternative and low cost technique to transfer III-V DHBT transistors onto Si-HR using Cu-Cu bonding for sub-THz power amplification for 6G

Jihed Derouiche¹, Abdelmalek Zemour², Malek Zegaoui¹, Yannick Roelens¹, Pascal Chevalier², Mohammed Zaknoune¹

1: Institut d’Electronique de Microélectronique et de Nanotechnologie, Lille, France; 2: STMicroelectronics, Grenoble, France

Simulation of Mitigation of Self-Heating Effects in HEMTs by All-Around Heat Spreader of Diamond

Benito González¹, Mahmud Dwidar², Abdullah Al-Khalidi², Joana Catarina Mendes³

1: Institute for Applied Microelectronics, Universidad de Las Palmas de Gran Canaria, Spain; 2: High-Frequency Electronics Group, Division of Electronics and Nanoscale Engineering, James Watt School of Engineering, University of Glasgow, United Kingdom; 3: Instituto de Telecomunicações, Universidade de Aveiro, Portugal

Cathodoluminescence Spectroscopy characterization of p- and n-type homoepitaxial diamond layers grown at University of Cádiz

Antonio Freire de Rivas^1,2,5, Fernando Lloret^1,2, Josué Millán-Barba^2,3, Gonzalo Alba^1,2, Mariko Suzuki⁴, Mehdi Naamoun⁵, Daniel Araujo^2,3

1: Department of Applied Physics, University of Cádiz, Spain; 2: IMEYMAT, University of Cádiz, Spain; 3: Derpartment of Materials Sciences, University of Cádiz, Spain; 4: Orbray Co. Ltd., Japan; 5: Proud S.A., Switzerland

N/ Si-codoped nanocrystalline diamonds as highly sensitive lumininescent thermometers

María Gragera García¹, Iván Carrillo Berdugo¹, Mabel Rodríguez Fernández¹, Javier Navas¹, Rodrigo Alcántara¹, Paulius Pobendiskas², Ken Haenen², Gonzalo Alba¹, David Zorrilla¹

1: University of Cadiz, Spain; 2: Hasselt University, Belgium

Relaxation of InGaAs jump-convex-inverse metamorphic buffers: Towards C-Band InAs single photon sources grown on GaAs

Carlos Macías, Enrico Squiccimarro, Malte Schwarz, Alejandro Gallego-Carro, Jose María Ulloa, Sergio Fernández-Garrido

Instituto de Sistemas Optoelectrónicos y Microtecnología, Spain

High-voltage AlGaN/GaN high-electron-mobility-transistors on Mn- and C-doped semi-insulating GaN substrates

Manabu Arai

Nagoya University, Japan

Crystal growth and wafer processing of 4-inch InAs substrates for infrared detectors

Xinyu Lv^1,2, Guiying Shen^1,2, Youwen Zhao¹, Chenhui Li¹

1: Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China; 2: College of materials science and opto-electronic technology, University of Chinese Academy of Sciences, Beijing, 100049, China

Synthesis of CsPbBr₃ QDs nanocomposite materials with optical behaviour using two photon polymerization

Miriam Herrera Collado¹, Jesús Hernández Saz², Ismael Romero Ocaña¹, Emmanuel Reyes³, Raúl Iván Sánchez³, Juan Martínez Pastor³, Sergio Ignacio Molina Rubio¹

1: Departamento de Ciencia de los Materiales, I. M. y Q. I., IMEYMAT, Facultad de Ciencias, Universidad de Cádiz, Puerto Real, (Cádiz), Spain; 2: Departamento de Ingeniería y Ciencia de los Materiales y del Transporte, Universidad de Sevilla, Sevilla, Spain; 3: Instituto de Ciencia de los Materiales- Universidad de Valencia, Catedrático José Beltrán, 2, 46071, Valencia, Spain

Emerging Technologies for High-Performance GaN power devices

Elison Matioli

Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland

Optimization of Schottky Contact Annealing for High-Performance GaN-on-SiC Diodes

Mahmoud ABOU DAHER¹, Ravikiran LINGAPARTHI³, Beatriz ORFAO¹, Malek ZEGAOUI¹, Roger Antonio PENA², Beatriz VASALLO², Susana PEREZ², Javier MATEOS², Tomas GONZALEZ², Dharmarasu NETHAJI³, K RADHAKRISHNAN³, Yannick ROELENS¹, Mohammed ZAKNOUNE¹

1: Institut d’Electronique de Microelectronique et de Nanotechnologie, France; 2: Applied Physics Department, USAL-NANOLAB, Universidad de Salamanca, Salamanca, Spain; 3: UMI3288 CINTRA, Nanyang Technological University, Singapore

SWITCHING PROPERTIES OF 400V 4H-SIC AND 3C-SIC MOSFETS

Bart Van Zeghbroeck

Univ. of Colorado Boulder, United States of America

High voltage molybdenum-GaN Schottky barrier diodes annealed at high temperature for DC power applications

Hugo Bouillaud¹, Amir Al Abdallah^1,2, Beatriz Orfao¹, Yannick Roelens¹, Malek Zegaoui³, Mohammed Zaknoune¹

1: IEMN-CNRS, Institute of Electronics Microelectronics and Nanotechnology, University of Lille, 59000 Lille, France; 2: LERMA-CNRS, Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres, Paris observatory, 75014 Paris, France; 3: IRCICA-CNRS, Research Institute on software and hardware devices for information and Advanced communication, University of Lille, 59000 Lille, France

Selective Area Grown GaN Field Emitters and their Characteristics

Dimitris Pavlidis, George Doundoulakis, Timothy Mirabito, Joan M. Redwing

Florida International University, United States of America

A Monte Carlo approach to interpret surface trap effects in GaN-based nano-diodes

Héctor Sánchez Martín¹, Elsa Pérez Martín², José Carlos Pedro³, Javier Mateos¹, Tomás González¹, Ignacio Íñiguez de la Torre¹

1: Universidad de Salamanca, Spain; 2: Laboratoire Charles Coulomb (L2C), Université de Montpellier, France; 3: Universidade de Aveiro, Instituto de Telecomunicações, Aveiro, Portugal

Triboelectric Nanogenerators For Medical Applications

Elena Del Corro

Consejo Superior de Investigaciones Científicas (CSIC), Spain

Post-synthesis modification of physical properties of 2D MoS2 on an insulating substrate

Emanuele Sangiorgi¹, Antonino Madonia¹, Francesca Migliore¹, Salvatore Ethan Panasci², Emanuela Schilirò², Filippo Giannazzo², Fiorenza Esposito^3,4, Luca Seravalli³, Gianpiero Buscarino^1,5, Marco Cannas¹, Simonpietro Agnello^1,5

1: Department of Physics and Chemistry Emilio Segrè, University of Palermo, Palermo, Italy; 2: Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM), Catania, Italy; 3: Consiglio Nazionale delle Ricerche – Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parma, Italy; 4: University of Parma, Department of Chemical Science, Life, and Environmental Sustainability, 43124 Parma, Italy; 5: ATEN Center, University of Palermo, Viale delle Scienze Ed. 18, 90128 Palermo, Italy

Nanoscale investigation on vertical 2D/3D heterojunction diodes by integration of large area MoS2 with bulk GaN

Salvatore Ethan Panasci¹, Emanuela Schilirò¹, Giuseppe Greco¹, Patrick Fiorenza¹, Fabrizio Roccaforte¹, Gianfranco Sfuncia¹, Giuseppe Nicotra¹, Eric Frayssinet², Yvon Cordier², Antal Koos³, Béla Pècz³, Filippo Giannazzo¹

1: Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi (CNR-IMM), Z.I. VIII Strada 5, 95121 Catania, Italy; 2: Université Côte d’Azur, CNRS, CRHEA, 06560 Valbonne, France; 3: HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary

MoS2 layers grown onto single crystalline diamond

Bela Pecz¹, Antal Koos¹, Salvatore Ethan Panasci², Gianfranco Sfuncia², Giuseppe Nicotra², Patrick Fiorenza², Fabrizio Roccaforte², Filippo Giannazzo², Emanuele Sangiorgi³, Andras Kovacs⁴

1: HUN-REN Centre for Energy Research, Hungary; 2: Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi (CNR-IMM); 3: Department of Physics and Chemistry – Emilio Segrè, University of Palermo; 4: Forschungszentrum Jülich, Ernst Ruska-Centre (ER-C), Jülich 52425, Germany

Ultrathin Superabsorber in the Visible Range Based on Transition Metal Dichalcogenides Nanostructures

Daniel Miranda¹, Joao Fernandes¹, Andrea Capasso¹, Pedro Alpuim¹, Juan Luis Garcia-Pomar²

1: INL, Portugal; 2: ISOM-UPM, Spain

Design, fabrication and characterization of 1550 nm integrated TE0 filters based on graphene-silicon nitride

Fernando Martín-Romero, Raquel Resta-López, Miguel Sinusia Lozano, Víctor J. Gómez

Nanophotonics Technology Center, Universitat Politècnica de València