Conference Agenda

Emerging Technologies for High-Performance GaN power devices

Elison Matioli

Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland

Optimization of Schottky Contact Annealing for High-Performance GaN-on-SiC Diodes

Mahmoud ABOU DAHER¹, Ravikiran LINGAPARTHI³, Beatriz ORFAO¹, Malek ZEGAOUI¹, Roger Antonio PENA², Beatriz VASALLO², Susana PEREZ², Javier MATEOS², Tomas GONZALEZ², Dharmarasu NETHAJI³, K RADHAKRISHNAN³, Yannick ROELENS¹, Mohammed ZAKNOUNE¹

1: Institut d’Electronique de Microelectronique et de Nanotechnologie, France; 2: Applied Physics Department, USAL-NANOLAB, Universidad de Salamanca, Salamanca, Spain; 3: UMI3288 CINTRA, Nanyang Technological University, Singapore

SWITCHING PROPERTIES OF 400V 4H-SIC AND 3C-SIC MOSFETS

Bart Van Zeghbroeck

Univ. of Colorado Boulder, United States of America

High voltage molybdenum-GaN Schottky barrier diodes annealed at high temperature for DC power applications

Hugo Bouillaud¹, Amir Al Abdallah^1,2, Beatriz Orfao¹, Yannick Roelens¹, Malek Zegaoui³, Mohammed Zaknoune¹

1: IEMN-CNRS, Institute of Electronics Microelectronics and Nanotechnology, University of Lille, 59000 Lille, France; 2: LERMA-CNRS, Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres, Paris observatory, 75014 Paris, France; 3: IRCICA-CNRS, Research Institute on software and hardware devices for information and Advanced communication, University of Lille, 59000 Lille, France

Selective Area Grown GaN Field Emitters and their Characteristics

Dimitris Pavlidis, George Doundoulakis, Timothy Mirabito, Joan M. Redwing

Florida International University, United States of America

A Monte Carlo approach to interpret surface trap effects in GaN-based nano-diodes

Héctor Sánchez Martín¹, Elsa Pérez Martín², José Carlos Pedro³, Javier Mateos¹, Tomás González¹, Ignacio Íñiguez de la Torre¹

1: Universidad de Salamanca, Spain; 2: Laboratoire Charles Coulomb (L2C), Université de Montpellier, France; 3: Universidade de Aveiro, Instituto de Telecomunicações, Aveiro, Portugal

Triboelectric Nanogenerators For Medical Applications

Elena Del Corro

Consejo Superior de Investigaciones Científicas (CSIC), Spain

Post-synthesis modification of physical properties of 2D MoS2 on an insulating substrate

Emanuele Sangiorgi¹, Antonino Madonia¹, Francesca Migliore¹, Salvatore Ethan Panasci², Emanuela Schilirò², Filippo Giannazzo², Fiorenza Esposito^3,4, Luca Seravalli³, Gianpiero Buscarino^1,5, Marco Cannas¹, Simonpietro Agnello^1,5

1: Department of Physics and Chemistry Emilio Segrè, University of Palermo, Palermo, Italy; 2: Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM), Catania, Italy; 3: Consiglio Nazionale delle Ricerche – Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parma, Italy; 4: University of Parma, Department of Chemical Science, Life, and Environmental Sustainability, 43124 Parma, Italy; 5: ATEN Center, University of Palermo, Viale delle Scienze Ed. 18, 90128 Palermo, Italy

Nanoscale investigation on vertical 2D/3D heterojunction diodes by integration of large area MoS2 with bulk GaN

Salvatore Ethan Panasci¹, Emanuela Schilirò¹, Giuseppe Greco¹, Patrick Fiorenza¹, Fabrizio Roccaforte¹, Gianfranco Sfuncia¹, Giuseppe Nicotra¹, Eric Frayssinet², Yvon Cordier², Antal Koos³, Béla Pècz³, Filippo Giannazzo¹

1: Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi (CNR-IMM), Z.I. VIII Strada 5, 95121 Catania, Italy; 2: Université Côte d’Azur, CNRS, CRHEA, 06560 Valbonne, France; 3: HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary

MoS2 layers grown onto single crystalline diamond

Bela Pecz¹, Antal Koos¹, Salvatore Ethan Panasci², Gianfranco Sfuncia², Giuseppe Nicotra², Patrick Fiorenza², Fabrizio Roccaforte², Filippo Giannazzo², Emanuele Sangiorgi³, Andras Kovacs⁴

1: HUN-REN Centre for Energy Research, Hungary; 2: Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi (CNR-IMM); 3: Department of Physics and Chemistry – Emilio Segrè, University of Palermo; 4: Forschungszentrum Jülich, Ernst Ruska-Centre (ER-C), Jülich 52425, Germany

Ultrathin Superabsorber in the Visible Range Based on Transition Metal Dichalcogenides Nanostructures

Daniel Miranda¹, Joao Fernandes¹, Andrea Capasso¹, Pedro Alpuim¹, Juan Luis Garcia-Pomar²

1: INL, Portugal; 2: ISOM-UPM, Spain

Design, fabrication and characterization of 1550 nm integrated TE0 filters based on graphene-silicon nitride

Fernando Martín-Romero, Raquel Resta-López, Miguel Sinusia Lozano, Víctor J. Gómez

Nanophotonics Technology Center, Universitat Politècnica de València