Conference Agenda

Epitaxial BN: growth, properties and applications

Andrzej Wysmolek

University of Warsaw, Poland

Effect of Silicon and Oxygen Pre-Implantation on Thermal Oxidation of 4H-SiC

Enrico Sangregorio¹, Fulvio Mazzamuto², Christina Sohl², Luke Kim², Corrado Bongiorno¹, Francesco La Via¹

1: National Research Council of Italy - Institute for Microelectronics and Microsystems, Italy; 2: Axcelis Technologies, Inc.

Vacancy complexes and clusters in MOVPE grown nitride layers and heterostructures

Alice Hospodková¹, Jakub Čížek², František Hájek¹, Jiří Pangrác¹, Tomáš Hubáček¹, Karla Kuldova¹

1: FZU - Institute of Physics, CAS, Czech Republic; 2: 2 Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 180 00 Prague, Czech Republik

Study of building blocks for the fabrication of high breakdown voltage GaN diodes by selective area epitaxy

Thibaud Guillemin¹, Ali Izi², Adama Seck², Sébastien Chenot¹, Ndembi Ignoumba-Ignoumba³, Mohammed El Amrani⁴, Dominique Planson³, Camille Sonneville³, Hassan Maher², Yvon Cordier¹, Matthew Charles⁴

1: Univ. Côte d’Azur, CNRS, CRHEA; 2: Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS; 3: INSA Lyon, Ecole Centrale de Lyon, CNRS, Université Claude Bernard Lyon 1; 4: Univ. Grenoble Alpes, CEA, LETI

High-Resolution Cathodoluminescence Mapping for Doping Quantification Across a Wide Range of Silicon Concentrations in GaN Epitaxial Layers

Zakariae M'QADDEM¹, Névine Rochat¹, Gwénolé Jacopin², Blend Mohamad¹, Thomas Kaltsounis¹, Marc VEILLEROT¹, Matthew Charles¹, Julien Buckley¹, Łukasz Borowik¹

1: Univ. Grenoble Alpes, CEA-LETI, Grenoble 38000, France; 2: Universite Grenoble Alpes, CNRS, Grenoble INP, Institut Neel, 38000 Grenoble, France

Fabrication of red LEDs with patterned GaN nanowires doped with Europium

Alvaro Revilla-Martín¹, Corentin Guérin², Fabien Jourdan², Gwénolé Jacopin¹, Bruno Gayral², Bruno Daudin²

1: CNRS/Institut Neel, France; 2: CEA/IRIG/PHELIQS/NPSC, France

Ferroelectricity in III-N based Semiconductors: New Paradigms for Material and Device Design

Simon Fichtner

Technische Fakultät Universität Kiel, Germany

Optimization of Regrown GaN Quasi-Vertical pn Diodes by Low-Power CF4 Plasma and in-situ TMGa Treatment

Qi Shu¹, Arno Kirchbrücher¹, Arne Debald², Michael Heuken^1,2, Holger Kalisch¹, Andrei Vescan¹

1: RWTH Aachen, Germany; 2: AIXTRON SE

Study of Annealing Temperature Effects on Pt-GaN Schottky Diode Characteristics

Beatriz Orfao¹, Amir Al Abdallah^1,3, Hugo bouillaud¹, Yannick Roelens¹, Malek Zegaoui², Mohammed Zaknoune¹

1: IEMN-CNRS, France; 2: Research Institute on software and hardware devices for information and Advanced communication, France; 3: LERMA-CNRS, Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres, Paris observatory, France

RF Detection Performance of GaN Devices: Measurements and Modelling

Tomás González¹, Ignacio Íñiguez-de-la-Torre¹, Gaudencio Paz-Martínez¹, Philippe Artillan², Beatriz Orfao³, Héctor Sánchez-Martín¹, Sergio García-Sánchez¹, Javier Mateos¹

1: Universidad de Salamanca, Spain; 2: Univ. Savoie Mont Blanc, France; 3: Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN), France

Perimeter and area gate leakage current in p-GaN HEMTs

Giuseppe Greco¹, Simone Milazzo^1,2, Patrick Fiorenza¹, Filippo Giannazzo¹, Giovanni Giorgino³, Cristina Miccoli³, Eloisa Castagna³, Salvo Mirabella⁴, Ferdinando Iucolano³, Fabrizio Roccaforte¹

1: CNR-IMM, Catania (Italy); 2: Department of Chemical Sciences, University of Catania (Italy); 3: STMicroelectronics, Catania (Italy); 4: Department of Physics and Astronomy “Ettore Majorana”, University of Catania (Italy)

Insights from Raman Spectroscopy on the Structural and Optical Properties of Semiconductors for Light Emitters and Photovoltaics

Maria Rosário P. Correia

University of Aveiro, Portugal

Neural Network-Based Calibration of Electrical Models for Silicon Carbide Diodes

Mohammed Amira, Aleš Chvála

Slovak University of Technology in Bratislava, Slovak Republic

β-Ga2O3 nanomembrane devices obtained by ion-beam-assisted exfoliation

Miguel Cardoso Pedro^1,2, Duarte Magalhães Esteves^1,2,3, Ana Sofia Sousa^1,3, Luís Cerqueira Alves^3,4,5, Katharina Lorenz^1,2,3,5, Marco Peres^1,2,3,5

1: INESC MN, Portugal; 2: IPFN, Instituto Superior Técnico, University of Lisbon, Portugal; 3: Instituto Superior Técnico, University of Lisbon, Portugal; 4: C2TN, Instituto Superior Técnico, University of Lisbon, Portugal; 5: DECN, Instituto Superior Técnico, University of Lisbon, Portugal

Optical and Electron Beam Characterization of a Stacked Diode CMOS Sensor for Energy-Resolved Imaging

Jorge J. Sáenz-Noval¹, Juan A. Leñero-Bardallo², Lionel Cervera Gontard¹

1: University of Cádiz, Spain; 2: Instituto de Microelectrónica de Sevilla (IMSE-CNM), CNM (CSIC, Universidad de Sevilla)

Development of Tribophotonic Devices for Electro-optical Modulation

Michael McKinlay¹, Anna Karoline Rüsseler^2,3, Lewis Fleming⁴, Hadi Heidari¹, Des Gibson⁴, Andreas Wienke^2,3, Carlos García Núñez¹

1: Microelectronics Lab, James Watt School of Engineering, University of Glasgow, G12 8QQ Glasgow, UK; 2: Laser Zentrum Hannover e.V., Hollerithallee 8, D-30419 Hannover, Germany; 3: Leibniz University Hannover, Cluster of Excellence PhoenixD, Welfengarten 1A, D-30167 Hannover, Germany; 4: Institute of Thin Films, Sensors and Imaging, University of the West of Scotland, PA1 2BE Paisley, U.K

Robust Performance of Molybdenum-GaN Schottky Diodes After 850 °C Annealing Exhibiting High Breakdown Voltage and Minimal ON Resistance

Amir Al Abdallah^1,3, Malek Zegaoui², Beatriz Orfao¹, Yannick Roelens¹, Jeanne Treuttel³, Martina Wiedner³, Mohammed Zaknoune¹

1: Institut d’Electronique de Microélectronique et de Nanotechnologie, Lille, France; 2: Research Institute on software and hardware devices for information and Advanced communication, Lille, France; 3: Laboratory for Instrumentation and Research in Astrophysics, Paris Observatory, France

New optical gate configuration for FET device

José Luis Cruces Romano¹, Fernando Lloret², Gonzalo Alba², Rodrigo Alcántara³, Javier Navas³, David Eon⁴, Daniel Araujo¹

1: Departament of Materials Science. University of Cádiz, 11510, Puerto Real, Spain; 2: Departament of Applied of Physics. University of Cádiz, 11510, Puerto real, Spain; 3: Departament of Physical Chemistry. University of Cádiz, 11510, Puerto real, Spain; 4: Institut Néel, CNRS, Grenoble INP. University of Grenoble Alpes, 38000, Grenoble, France

Alternative and low cost technique to transfer III-V DHBT transistors onto Si-HR using Cu-Cu bonding for sub-THz power amplification for 6G

Jihed Derouiche¹, Abdelmalek Zemour², Malek Zegaoui¹, Yannick Roelens¹, Pascal Chevalier², Mohammed Zaknoune¹

1: Institut d’Electronique de Microélectronique et de Nanotechnologie, Lille, France; 2: STMicroelectronics, Grenoble, France

Simulation of Mitigation of Self-Heating Effects in HEMTs by All-Around Heat Spreader of Diamond

Benito González¹, Mahmud Dwidar², Abdullah Al-Khalidi², Joana Catarina Mendes³

1: Institute for Applied Microelectronics, Universidad de Las Palmas de Gran Canaria, Spain; 2: High-Frequency Electronics Group, Division of Electronics and Nanoscale Engineering, James Watt School of Engineering, University of Glasgow, United Kingdom; 3: Instituto de Telecomunicações, Universidade de Aveiro, Portugal

Cathodoluminescence Spectroscopy characterization of p- and n-type homoepitaxial diamond layers grown at University of Cádiz

Antonio Freire de Rivas^1,2,5, Fernando Lloret^1,2, Josué Millán-Barba^2,3, Gonzalo Alba^1,2, Mariko Suzuki⁴, Mehdi Naamoun⁵, Daniel Araujo^2,3

1: Department of Applied Physics, University of Cádiz, Spain; 2: IMEYMAT, University of Cádiz, Spain; 3: Derpartment of Materials Sciences, University of Cádiz, Spain; 4: Orbray Co. Ltd., Japan; 5: Proud S.A., Switzerland

N/ Si-codoped nanocrystalline diamonds as highly sensitive lumininescent thermometers

María Gragera García¹, Iván Carrillo Berdugo¹, Mabel Rodríguez Fernández¹, Javier Navas¹, Rodrigo Alcántara¹, Paulius Pobendiskas², Ken Haenen², Gonzalo Alba¹, David Zorrilla¹

1: University of Cadiz, Spain; 2: Hasselt University, Belgium

Relaxation of InGaAs jump-convex-inverse metamorphic buffers: Towards C-Band InAs single photon sources grown on GaAs

Carlos Macías, Enrico Squiccimarro, Malte Schwarz, Alejandro Gallego-Carro, Jose María Ulloa, Sergio Fernández-Garrido

Instituto de Sistemas Optoelectrónicos y Microtecnología, Spain

High-voltage AlGaN/GaN high-electron-mobility-transistors on Mn- and C-doped semi-insulating GaN substrates

Manabu Arai

Nagoya University, Japan

Crystal growth and wafer processing of 4-inch InAs substrates for infrared detectors

Xinyu Lv^1,2, Guiying Shen^1,2, Youwen Zhao¹, Chenhui Li¹

1: Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China; 2: College of materials science and opto-electronic technology, University of Chinese Academy of Sciences, Beijing, 100049, China

Synthesis of CsPbBr₃ QDs nanocomposite materials with optical behaviour using two photon polymerization

Miriam Herrera Collado¹, Jesús Hernández Saz², Ismael Romero Ocaña¹, Emmanuel Reyes³, Raúl Iván Sánchez³, Juan Martínez Pastor³, Sergio Ignacio Molina Rubio¹

1: Departamento de Ciencia de los Materiales, I. M. y Q. I., IMEYMAT, Facultad de Ciencias, Universidad de Cádiz, Puerto Real, (Cádiz), Spain; 2: Departamento de Ingeniería y Ciencia de los Materiales y del Transporte, Universidad de Sevilla, Sevilla, Spain; 3: Instituto de Ciencia de los Materiales- Universidad de Valencia, Catedrático José Beltrán, 2, 46071, Valencia, Spain