Conference Agenda

Homoepitaxial growth of β-Ga2O3 by MOVPE

Andreas Popp, Ta-Shun Chou, Saud Bin Anooz, Jana Rehm, Arub Akhtar, Zbigniew Galazka, Andreas Fiedler, Martin Albrecht

LEIBNIZ-INSTITUT FÜR KRISTALLZÜCHTUNG im Forschungsverbund Berlin e.V., Germany

Study of optical anisotropy and polarization effects in β-Ga2O3 by X-ray excited optical luminescence

Paula Pérez-Peinado¹, Jaime Dolado², Pedro Luis Alcázar^1,3, Daniel Carrasco¹, Ruth Martínez-Casado¹, Valentina Bonino², Gema Martínez-Criado², Jani Jesenovec⁴, John Stuart McCloy⁴, Francisco Domínguez-Adame¹, Jorge Quereda³, Emilio Nogales¹, Bianchi Méndez¹

1: Departamento de Física de Materiales, Universidad Complutense de Madrid, Spain; 2: European Synchrotron Radiation Facility, ESRF, Grenoble, France; 3: 2D Foundry Group. Instituto de Ciencia de Materiales de Madrid, Spain; 4: Institute of Materials Research, Washington State University, USA

AlScN barrier HEMTs grown by NH3-MBE with AlN and GaN cap layers

Valentina Gallardo-Mödinger, Florian Bartoli, Aimeric Courville, Maxime Hugues, Yvon Cordier

Université Côte d'Azur, France

Diamond/AlN/diamond heterostructure

Lucía Nieto Sierra¹, Fernando Lloret¹, Juan Jesús Gallardo¹, Rozita Rouzbahani², Laura Mazón-Maldonado³, Carlos García Núñez³, Daniel Araujo¹

1: University of Cádiz, Spain; 2: Hasselt University, Belgium; 3: University of Glasgow, Glasgow, United Kingdom

Inter-die Hybrid Cu/Diamond Microbump Bonding for 3D Heterogeneous Integration

Zhengwei Chen¹, Shusmitha Kyatam², Keyu Wang¹, Noah Opondo¹, Miguel A. Neto³, Ricardo Oliveira², Jie Li¹, Tiwei Wei¹, Joana Catarina Mendes²

1: Birck Nanotechnology Center and School of Mechanical Engineering, Purdue University, USA; 2: Instituto de Telecomunicações, University of Aveiro, Portugal; 3: CICECO – Aveiro Institute of Materials, Department of Materials and Ceramic Engineering, University of Aveiro, Portugal

Assessment of diamond substrates by time of flight electron beam induced current

Julien Pernot

Univ. Grenoble Alpes, France

Is CVD diamond (soon?) ready to become an electronic material?

Philippe Bergonzo

Seki Diamond Systems, Cornes Technologies USA, USA

Influence of Growth Temperature and Scandium Concentration on the Surface Oxidation of ScAlN Films Grown by Molecular Beam Epitaxy

Valentina Gallardo Mödinger¹, Frédéric Georgi², Ileana Florea¹, Xavier Wallart³, Philippe Vennéguès¹, Yvon Cordier¹, Maxime Hugues¹

1: Université Côte d’Azur, CNRS, CRHEA, rue B. Gregory, 06560 Valbonne, France; 2: Mines Paris, PSL University, Center for Material Forming (CEMEF), UMR CNRS, 06904 Sophia Antipolis, France; 3: University Lille, CNRS, Centrale Lille, Junia, University Polytechnique Hauts de France, UMR 8520-IEMN, F59000 Lille, France

On the rapid thermal annealing of AlN thin films for piezoelectric MEMS

Laura Mazón-Maldonado¹, Lucía Nieto-Sierra², Des Gibson³, Roghaieh Parvizi¹, Hadi Heidari¹, Carlos Garcia Nuñez¹

1: Microelectronics Lab (meLAB), James Watt School of Engineering, University of Glasgow, UK; 2: Department of Material Sciences, Metallurgical Engineering and Inorganic Chemistry, University of Cádiz, Spain; 3: Institute of Thin Films, Sensors and Imaging, University of the West of Scotland, UK

AlGaN growth for FinFET devices

Pawel Prystawko¹, Adamantia Logotheti^2,3, Navya Sri Garigapati^4,5, Izabella Grzegory¹, Vanya Darakchieva^2,6, Erik Lind⁴

1: Institute of High Pressure Physics, PAS, Poland; 2: Center for III-Nitride Technology, C3NiT-Janzén, Solid State Physics and NanoLund, Lund University, Sweden; 3: Volvo Cars Corporation, Greater Gothenburg Metropolitan Area, Sweden; 4: Department of Electrical and Information Technology and NanoLund, Lund University, Sweden; 5: Hexagem AB, Sweden; 6: Center for III-Nitride Technology, C3NiT-Janzén, Department of Physics, Chemistry and Biology (IFM), Linköping University, Sweden

Bandgap-Engineered III-V-N Superlattices for Monolithic Tandem Solar Cells Lattice-Matched to Si

Carlos Macías, Ainhoa Orte-Ortega, Jose María Ulloa, Sergio Fernández-Garrido

Instituto de Sistemas Optoelectrónicos y Microtecnología, Spain

13mW/µm² and 24% PAE at 94GHz for 0.44-um Transferred InP/GaAsSb DHBT on Si

Abdelmalek Zemour^1,2, Malek Zegaoui¹, Yannick Roelens¹, Etienne Okada¹, Pascal Chevalier², Mohammed Zaknoune¹

1: IEMN, France; 2: STMicroelectronics, Crolles, 38920, France

Vacancies in NiO: DFT Study for Optoelectronic Applications

Felipe Bermúdez-Mendoza, Diego J. Ramos-Ramos, Cristian G. Vásquez, David Maestre, Francisco Domínguez-Adame, Bianchi Méndez, Ruth Martínez-Casado, Elena Díaz

Universidad Complutense de Madrid, Spain

Simulation and Analysis of MOVPE Grown III-V PIN Diodes for RF Applications

Simeon Nikolaev Vladimirov, Iván García, Ignacio Rey-Stolle

Universidad Politécnica de Madrid, Spain

Fabrication and monitoring of quantum emitters in Aluminium Nitride via Al-ion implantation and thermal annealing

Elena Nieto Hernández^1,2, Hüseyin Bilge Yağcı^3,4, Vanna Pugliese^1,2, Emilio Corte^1,2, Pietro Aprà^1,2, Joseph K. Cannon^3,4, Sam G. Bishop^3,4, John P. Hadden^3,4, Sviatoslav Ditalia Tchernij^1,2, Paolo Olivero^1,2, Anthony J. Bennett^3,4, Jacopo Forneris^1,2

1: Dipartimento di Fisica, Università di Torino, via Pietro Giuria 1, Torino 10125, Italy; 2: Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Torino, via Pietro Giuria 1, Torino 10125 Italy; 3: School of Engineering, Cardiff University, Queen’s Building, The Parade, Cardiff CF24 3AA, United Kingdom; 4: Translational Research Hub, Cardiff University, Maindy Road, Cathays, Cardiff CF24 4HQ, United Kingdom

Novel Ion Detection Strategy for Deterministic Implantation Using an Ultra-Thin Silicon Carbide Membrane Detector

Enrico Sangregorio¹, Andreo Crnjac², Lucia Calcagno³

1: National Research Council of Italy - Institute for Microelectronics and Microsystems, Italy; 2: Division of Experimental Physics, Ruđer Bošković Institute; 3: Department of Physics and Astronomy “Ettore Majorana”, University of Catania

Co-Integration of High-Frequency Devices on Epitaxial ScAlN for Tunable RF SAW Filters

Nagesh Bhat¹, Seif El-whibi¹, Edouard Lebouvier¹, Nicolas Defrance¹, Jean-Claude De Jaeger¹, Zahia Bougrioua¹, Florian Bartoli², Valentina Gallardo-Mödinger², Maxime Hugues², Yvon Cordier², Sami Hage-Ali³, Ulrich Youbi³, Thierry Aubert³, Omar Elmazria³, Marie Lesecq¹

1: Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, UMR 8520 – IEMN-Institut d’Electronique de Microélectronique et de Nanotechnologie, F-59000, Lille, France; 2: Université Côte d’Azur, CNRS, CRHEA, rue B. Gregory, 06560 Valbonne, France; 3: Université de Lorraine - CNRS, Institut Jean Lamour UMR 7198, Nancy,54000, France

Study of RF-sputtered Ga₂O₃ Thin Films for DUV Photodetectors

Ana Sofia Sousa^1,2, Duarte M. Esteves^2,3, Tiago T. Robalo⁴, Mário S. Rodrigues⁴, Luís F. Santos⁵, Reinhard Schwarz^1,6, Katharina Lorenz^1,2,3, Marco Peres^1,2,3

1: Instituto Superior Técnico, University of Lisbon, Portugal; 2: INESC Microsystems and Nanotechnology, Lisbon, Portugal; 3: IPFN, Instituto Superior Técnico, University of Lisbon, Portugal; 4: Departamento de Física and BioISI – BioSystems and Integrative Sciences Institute, Faculdade de Ciências, University of Lisbon, Portugal; 5: Centro de Química Estrutural, Institute of Molecular Sciences and Departamento de Engenharia Química, Instituto Superior Técnico, University of Lisbon, Portugal; 6: CeFEMA, Instituto Superior Técnico, University of Lisbon, Portugal

Formation and modification of Ag and Au nanoparticles created by ion implantation in Ga2O3 thin films

Inês Freitas^1,2, Ana Sofia Sousa^1,2, Duarte Magalhães Esteves^1,2,3, Ângelo Rafael Granadeiro da Costa^1,4, Joana Madureira^1,4,5, Sandra Cabo Verde^1,4,5, Karla Ivanković Nizić⁶, Toni Dunatov⁶, Georgios Provatas⁶, Katharina Lorenz^1,2,3,5, Marco Peres^1,2,3,5

1: Instituto Superior Técnico, University of Lisbon and INESC MN, Portugal; 2: INESC MN, Lisbon, Portugal; 3: IPFN, Instituto Superior Técnico, University of Lisbon, Portugal; 4: C2TN, Instituto Superior Técnico, University of Lisbon, Portugal; 5: DECN, Instituto Superior Técnico, University of Lisbon, Portugal; 6: Division of Experimental Physics, Ruđer Bošković Institute, Bijenička cesta 54, Zagreb, Croatia

Swift Heavy Ion irradiation of GaN and AlGaN Semiconductors

Belarmino Tavares^1,2, Duarte Esteves^1,2, Katharina Lorenz^1,2,3, Marco Peres^1,2,3, Sérgio Magalhães^2,3, Miguel Sequeira^3,4, Isabelle Monnet⁵, Clara Grygiel⁵, Florent Moisy⁵, Mamour Sall⁵

1: INESC MN, Lisboa, 1000-029 Portugal; 2: Instituto Superior Técnico, University of Lisbon, Lisboa, Portugal; 3: IPFN, Instituto Superior Técnico, University of Lisbon , Campus Tecnológico e Nuclear, Lisboa, Portugal; 4: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Germany; 5: CIMAP (CEA, CNRS, ENSICAEN, UCN), Caen, France

Proton beam imaging using GaN detector array

Maxime Hugues¹, Matilde Siviero¹, Lucas Lesourd¹, Nicolas Couret¹, Eric Frayssinet¹, Shirley Prado De La Cruz¹, Sébastien Chenot¹, Marie Vidal², Petter Hofverberg², Joël Hérault², Nico Brosda³, Andreas Wieck³, Stephane Higueret⁴, Jean-Yves Duboz¹

1: Université Côte d’Azur, CNRS-CRHEA; 2: Institut Méditerranéen de ProtonThérapie – Centre Antoine Lacassagne; 3: Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum; 4: IPHC-CNRS

Multiscale characterization of silicon carbide (4H-SiC) after sulfurization treatments

Fabrizio Roccaforte¹, Salvatore Ethan Panasci¹, Marilena Vivona¹, Giuseppe Greco¹, Patrick Fiorenza¹, Attila Sulyok², Antal Koos², Béla Pècz², Filippo Giannazzo¹

1: Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi (CNR-IMM), Z.I. VIII Strada 5, 95121 Catania, Italy; 2: HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary

Scalable growth of optically uniform MoWS2 alloys by sulfurization of ultrathin Mo/W films

Salvatore Ethan Panasci¹, Emanuela Schilirò¹, Antal Koos², Tayfun Kutlu³, Hasan Sahin³, Fabrizio Roccaforte¹, Béla Pècz², Filippo Giannazzo¹

1: Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi (CNR-IMM), Z.I. VIII Strada 5, 95121 Catania, Italy; 2: HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; 3: Department of Photonics Izmir Institute of Technology, 35430 Izmir, Turkiye

Ohmic contacts on phosphorus-doped diamond fabricated by FIB transformation and surface Ga+ implantation

Gabriel Mesas Peña¹, Fernando Lloret^1,2, Antonio Freire de Rivas¹, Josué Millán-Barba^2,3, Gonzalo Alba^1,2, Mariko Suzuki⁴, M. Pilar Villar Villar^2,3, Daniel Araujo^2,3

1: Department of Applied Physics, University of Cádiz, 11510 Puerto Real, Spain; 2: IMEYMAT, University of Cádiz, 11510 Puerto Real, Spain; 3: Department of Material Science, University of Cádiz, 11510 Puerto Real, Spain; 4: Orbray Co., Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo, 123-8511 Japan.

Structural study of ZnOthin films obtained by plasma assisted magnetron sputtering

Isabel Maria Casal Arazola¹, Michael McKinlay², Carlos Garcia Nuñez², Lucia Nieto Sierra¹, Gonzalo Alba^3,4, M.Pilar Villar^1,3

1: Dpto. Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510-Puerto Real,Spain; 2: MicroelectronicsLab, James Watt SchoolofEngineering, Universityof Glasgow, G12 8QQ Glasgow, UK; 3: IMEYMAT, UCA, Spain; 4: Dpto. Física Aplicada, Universidad de Cádiz, 11510-Puerto Real, Spain

Graphene Powder Synthesized via Microwave Plasma at Atmospheric Pressure as a Multifunctional Material for Compound Semiconductor Applications

Francisco J. Morales-Calero, Antonio Cobos-Luque, Andrés M. Raya Bejarano, José Muñoz Espadero, Rocío Pérez Portero, Kevin Pareja Ruiz, Norma Y. Mendoza-González, Jorge A. Alcusón Belloso, María Dolores Calzada Canalejo, Rocío Rincón Liévana

Laboratory of Innovation in Plasmas, Universidad de Córdoba, Spain