Conference Agenda

Growth Dynamics and Surface Morphology of AlGaAsBi Alloys for Low-Noise Avalanche Photodiode Applications

Verónica Braza Blanco¹, Teresa Ben¹, Daniel F. Reyes¹, Nicholas J. Bailey², Matthew R. Carr², Robert D. Richards², David Gonzalez¹

1: University Research Institute on Electron Microscopy & Materials, (IMEYMAT). University of Cadiz, Puerto Real (Cádiz) 11510. Spain.; 2: The University of Sheffield, School of Electrical and Electronic Engineering, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, UK

Structural characteristics of β‐Ga2O3 films deposited by MOVPE on 4H-SiC templates

Roberto Fornari^1,3, Gianfranco Sfuncia², Corrado Bongiorno², Giuseppe Nicotra², Matteo Bosi³, Luca Seravalli³, Francesco Mezzadri⁴, Antonella Parisini¹, Nadia Licciardello⁵, Davide Patti⁵, Delfo Sanfilippo⁵

1: Dept. SMFI, University of Parma, Italy; 2: CNR-IMM Institute, Catania, Italy; 3: CNR-IMEM Institute, Parma, Italy; 4: Dept. SCVSA, University of Parma, Italy; 5: STMicroelectronics, Catania, Italy

Backscattered electron microscopy for the characterization of III-V semiconductor nanowires: challenges and opportunities

Paula Mouriño¹, Laura Monge-Bartolomé¹, Jovana Obradović², Mariia Lamers³, Sebastian Lehmann³, Miguel Sinusia Lozano¹, Žarko Gačević², Kimberly A. Dick⁴, Magnus T. Borgstrom³, Víctor J. Gómez¹

1: Nanophotonics Technology Center, Universitat Politècnica de València, Spain; 2: Institute for Optoelectronic Systems and Microtechnology (ISOM), Universidad Politécnica de Madrid, Spain; 3: Solid State Physics and NanoLund, Lund University, Sweden; 4: Centre for Analysis and Synthesis and NanoLund, Lund University, Sweden

Quantification of the segregation in InAs/AlSb triple barrier resonant-tunneling

Francisco Alvarado Cesar¹, Peter Hodgson², Manus Hayne², Teresa Ben³, Verónica Braza³, Daniel F. Reyes³, David González³, Richard Beanland¹

1: University of Warwick, United Kingdom; 2: Lancaster University, United Kingdom; 3: Universidad de Cádiz, Spain

Electron Channelling Contrast Imaging for the characterization of dislocations in III-V thin films on Silicon (001)

Laura Monge Bartolome¹, Paula Mouriño Miñambres¹, Alicia Peiro Codoñer¹, Miguel Sinusia Lozano¹, Zao Yan², Ivan Garcia Vara³, Thierry Baron⁴, Qiang Li², Victor J. Gomez¹

1: Nanophotonics Technology Center, Universitat Politècnica de València, Valencia 46022, Spain; 2: School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, United Kingdom; 3: Instituto de Energía Solar, Universidad Politécnica de Madrid, Madrid, Spain; 4: Univ. Grenoble Alpes, CNRS, CEA-LETI, LTM, 38054, Grenoble, France

Shaping the Future of GaN Crystal Growth Technology

Michał Boćkowski

Institute of High Pressure Physics Polish Academy of Sciences,, Poland

In-situ observation of the homogenization and decomposition of the InGaN Quantum Wells

Mike Leszczynski¹, Ewa Grzanka¹, Artur Lachowski¹, Szymon Grzanka¹, Robert Czernecki¹, Sondes Bauer², Tilo Baumbach²

1: Institute of High Pressure Physics, Poland; 2: Karlsruhe Institute of Technology, Germany

Numerical and analytical models for (111) 3C-SiC double clamped beams

Annamaria Muoio¹, Angela Garofalo^1,2, Saverio De Luca¹, Sergio Sapienza³, Matteo Ferri³, Luca Belsito³, Alberto Roncaglia³, Francesco La Via¹

1: CNR-IMM Catania, Italy; 2: Material Science Department University Milano-Bicocca, Italy; 3: CNR-ISMN Bologna, Italy

Effects on 4H-SiC of thermal annealing at high pressure of Oxygen or Helium

Gianmarco Laurella¹, Francesca Migliore¹, Marco Cannas¹, Franco Gelardi¹, Corrado Coccorese², Massimo Boscaglia², Massimo Davide Pirnaci², Simonpietro Agnello³

1: Department of Physics and Chemistry, University of Palermo, Palermo (Italy); 2: STMicroelectronics, Catania (Italy); 3: AtenCenter, University of Palermo, Palermo (Italy)

Strain Engineering for β-Ga2O3 Nanostructures: Ion-beam-exfoliated Microtubes & Nanomembranes

Duarte Magalhães Esteves^1,2, Ru He³, Calliope Bazioti⁴, Sérgio Magalhães^2,5, Miguel Carvalho Sequeira⁶, Luís Filipe Santos⁷, Alexander Azarov⁴, Andrej Kuznetsov⁴, Flyura Djurabekova³, Katharina Lorenz^1,2,5, Marco Peres^1,2,5

1: INESC MN, Lisbon, Portugal; 2: IPFN, Instituto Superior Técnico, University of Lisbon, Portugal; 3: Department of Physics, University of Helsinki, Finland; 4: Department of Physics and Centre for Materials Science and Nanotechnology, University of Oslo, Norway; 5: Department of Nuclear Sciences and Engineering, Instituto Superior Técnico, University of Lisbon, Portugal; 6: Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany; 7: Centre for Structural Chemistry, Institute of Molecular Sciences and Department of Chemical Engineering, Instituto Superior Técnico, University of Lisbon, Portugal

From wurtzite to zinc blende phase and vice versa in catalyst-free GaN nanowires

Bruno DAUDIN¹, Corentin GUERIN^1,2, Fabien JOURDAN¹, Bruno GAYRAL¹, Jean-Luc ROUVIERE¹, Gwénolé JACOPIN²

1: CEA-Grenoble, France; 2: CNRS-Institut Néel, France

Fast Growth of Strained α-Fe2O3 Nanowires by Joule-Heating

Diego José Ramos-Ramos, Geraldo Cristian Vásquez, David Maestre

Complutense University of Madrid, Spain

Nanoscale Correlative X-ray Study of Hybrid Semiconductor Nanowire Architectures

Jaime Dolado¹, Edoardo Zatterin¹, Valentina Bonino¹, Ruth Martínez-Casado², Emilio Nogales², Pedro Hidalgo², Bianchi Méndez², Gema Martínez-Criado^1,3

1: European Synchrotron Radiation Facility (ESRF), France; 2: Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, 28040-Madrid, Spain; 3: Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, 28049 Cantoblanco, Spain

Resistive heating of Mo wires to produce MoO3 nanostructures: simulations and experiments

Beatriz Rodríguez Fernández, Pedro Hidalgo Alcalde, Bianchi Méndez Martín

Complutense University of Madrid, Spain

Impact of Growth Interruptions on InAs/GaAsBi Quantum Dots: Unveiling Three-Phase Nanoparticle Formation.

Daniel F. Reyes¹, Sara Flores¹, Veronica Braza¹, Teresa Ben¹, Nicholas J. Bailey², Matthew R. Carr², Jesus Hernandez-Saz³, Robert D. Richards², David González¹

1: University Research Institute on Electron Microscopy & Materials, (IMEYMAT). University of Cadiz, Puerto Real (Cádiz), Spain.; 2: University of Sheffield, School of Electrical and Electronic Engineering, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, UK.; 3: Departamento de Ingeniería y Ciencia de los Materiales y del Transporte, Universidad de Sevilla, Sevilla, Spain.

Synthesis of graphene-nanoparticles nanocomposites via plasma at atmospheric pressure

Rocío Pérez-Portero, Antonio Cobos-Luque, Francisco J. Morales-Calero, José Muñoz, Andrés M. Raya, Rocío Rincón

Universidad de Córdoba, Spain

Dilute-Nitride Nanostructures Tailor-made for Room-Temperature Opto-Spintronics

Y.Q. Huang¹, V Polojärvi², P Höjer¹, A Aho², R Isoaho², T Hakkarainen², M Guina², I.A. Buynaova¹, W.M. Chen¹

1: Linköping University, Sweden; 2: Tampere University, Finland

Insight into the mechanism of lattice damage in ground and polished InAs substrates

Guiying Shen

the Institute of Semiconductors, CAS, China, People's Republic of

Effects of Bi Incorporation on Recombination Processes in GaAs/GaAsBi Core/Shell Nanowires

M. Jansson¹, V. V. Nosenko¹, G. Yu. Rudko¹, F. Ishikawa², W. M. Chen¹, Irina A. Buyanova¹

1: Linköping University, Sweden; 2: Hokkaido University, Japan

NiO/k-Ga2O3 heterojunctions as self-powered broadband ultraviolet photodiodes

Abderrahim Moumen^1,2, Payam Rajabi Kalvani¹, Francesco Mattei¹, Gianluca Foti¹, Roberto Mosca², Antonella Parisini¹, Maura Pavesi¹, Matteo Bosi², Luca Seravalli², Francesco Mezzadri³, Andrea Baraldi¹, Piero Mazzolini^1,2, Salvatore Vantaggio¹, Alessio Bosio¹, Roberto Fornari^1,2

1: Dept. SMFI, University of Parma, Italy; 2: CNR-IMEM Institute, Parma, Italy; 3: Dept. SCVSA, University of Parma, Italy

Development of ScAlN/GaN High Electron Mobility Transistor on silicon substrate for RF applications

Seif El Whibi¹, Nagesh Bhat¹, Yassine Fouzi¹, Nicolas Defrance¹, Zahia Bougrioua¹, Jean-Claude De Jaeger¹, Florian Bartoli², Maxime Hugues², Yvon Cordier², Marie Lesecq¹

1: IEMN - CNRS, France; 2: CRHEA -CNRS, France

Compact and planar NiO/β-Ga₂O₃ heterojunction photodiode for highly-selective UV-C detection in self-powered mode

Abderrahim Moumen^1,2, Payam Rajabi Kalvani^1,2, Francesco Mattei¹, Gianluca Foti¹, Roberto Mosca², Antonella Parisini¹, Maura Pavesi¹, Matteo Bosi², Luca Seravalli², Francesco Mezzadri³, Andrea Baraldi¹, Piero Mazzolini^1,2, Salvatore Vantaggio¹, Alessio Bosio¹, Roberto Fornari^1,2

1: Dept. of Mathematical, Physical and Computer Sciences, University of Parma, Italy; 2: CNR-IMEM Institute, Parma, Italy; 3: Dept. of Chemistry, Life Sciences and Environmental Sustainability, University of Parma, Italy

Reactive sputter deposition of gallium oxynitride thin films

Marcell Gajdics, György Sáfrán, Béla Pécz

HUN-REN Centre for Energy Research, Hungary

Hybrid AI-Thermal Modelling of Self-Heating in GaN HEMTs Trained with Monte Carlo Simulations

Sergio García-Sánchez, Jorge Carrera, Ignacio Íñiguez-de-la-Torre, Javier Mateos, Tomás González

Universidad de Salamanca, Spain

Structural and compositional study of thermal oxidation of thin GaSe layers

Uriel López¹, Teresa Ben¹, Guillermo Bárcena², Natham Cottam³, Mustaqeen Shiffa³, Tin S. Cheng³, Sergei V. Novikov³, Amalia Patané³, David Gonzalez¹

1: University Research Institute on Electron Microscopy and Materials (IMEYMAT). University of Cadiz, Puerto Real (Cádiz) 11510. Spain.; 2: Department of Informatic Engineering, University Cádiz. Spain.; 3: School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK

Optimization of n++GaN Cap Surface via Digital Etching for InAlN/GaN E/D-Mode MOS HEMTs

Ondrej Pohorelec, Dagmar Gregušová, Michal Blaho, Andrii Kozak, Boris Hudec, Roman Stoklas, Ján Kuzmík

Institute of Electrical Engineering, Slovak Academy of Sciences, Slovak Republic