Overview and details of the sessions of this conference. Please select a date or location to show only sessions at that day or location. Please select a single session for detailed view (with abstracts and downloads if available).
Please note that all times are shown in the time zone of the conference. The current conference time is: 29th June 2025, 12:44:38am CEST
Semiconductor-Focused Simulation Environment for Emitted Noise Sensitivity of MOSFET Parameters
Robert Kragl1, Steffen Beushausen1, Karl Oberdieck1, Konstantin Spanos1, Ingmar Kallfass2
1Robert Bosch, Germany; 2University of Stuttgart, Germany
This paper presents an analytical model for analyzing the sensitivity of silicon carbide (SiC) MOSFET parameters on noise emissions in power electronics. The study extends a state-space simulation environment to include EMC behavior of converters, to evaluate the impact of various MOSFET parameters on emitted noise. The model focuses on the frequency range of 10 MHz to 400 MHz, where switching transients dominate. Sensitive MOSFET parameters for noise emissions are identified such as threshold voltage, saturation transconductance, and the channel length modulation. Overall, the framework provides a comprehensive tool for EMC design, ensuring effective noise management in power electronic systems.
Susceptibility to RFI of Monolithic GaN Current Sources
Filippo Carastro1, Davide Lena2, Franco Fiori1
1Politecnico di Torino, Italy; 2STMicroelectronics, Italy
This paper investigates the demodulation of radio-frequency interference (RFI) in two different topologies of current sources implemented in monolithic GaN technology. An analytical model is developed which relates transistor nonlinearities to circuit parasitics. It is then used to design RFI-immune current sources. Simulation results demonstrate the effectiveness of these designs, showing a significant reduction in the output offset current from approximately 10uA to 200nA when subjected to 1V amplitude, 1GHz interference signal.
The Influence of Ionizing Radiation on the Electromagnetic Immunity of a Bandgap Reference
Nikolaus Juch1, Alicja Michalowska-Forsyth1, Daniel Kircher1,2, Bernd Deutschmann1
1Institute of Electronics, Graz University of Technology, Austria; 2Christian Doppler Laboratory for EMC Aware Robust Electronic Systems
During operation, electronic systems are often exposed to a wide range of external disturbances, potentially including electromagnetic interference (EMI) and ionizing radiation. Evaluating the electromagnetic immunity of integrated circuits (ICs) is well established but usually performed under nominal operating conditions only. It is important to assess combined effects during system evaluation to reflect a circuit’s performance under realistic environmental conditions. This study investigates the combined effects of electromagnetic interference and ionizing radiation on a custom voltage reference circuit fabricated in a commercial 180 nm CMOS process. Direct power injection measurements were conducted on an untreated sample and after exposing it to ionizing radiation with low-energy X-rays up to a total dose of 25 Mrad. The offset induced by electromagnetic interference was measured over a frequency range of 1 MHz to 1 GHz. A detailed analysis of the dose-related changes in immunity to electromagnetic interference is presented in the form of measured results and initial simulation examples.
Simulation of an IC Level Radiated Immunity Portable Transmitter Test
Aymen BEN SAADA, Renaud Gillon, Patricia Joris
Melexis Technologies N. V., Belgium
This investigation analyzes the susceptibility of an analog sensor to electromagnetic fields within a simulated and measured portable transmitter test scenario. The analysis employs a modeled antenna source and planewave simulations, corroborated by in-situ electric field measurements, to provide a comprehensive evaluation of sensor immunity to near-field waves.
