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Future Mobility Electromagnetic Reliability Study based on HPVC Degradation Evaluation with Electromagnetic Noise Analysis
Seokbae Moon1, Byeongsoo Kim1, Seungho Ahn1, Youngduk Han1, Hae Lyong Kim2, Jae Sang Yoon2
1Hyundai Motors Group, Korea, Republic of (South Korea); 2Korea Automotive Technology Institute, Republic of (South Korea)
The automobile industry is creating a paradigm shift with the following two keywords: Electrification and Autonomous driving. During this process, the roles of multiple controllers are integrated into the central computer, which is known as the HPVC (High Performance Vehicle Computer). The HPVC not only performs autonomous driving but also would be a basic platform of SDV (Software Defined Vehicle) at the same time.
In this paper, we propose a method of evaluating the status of the HPVC based on measuring electromagnetic noise emissions from the internal circuit of the HPVC, especially with the near field electromagnetic measurement. As the elements in IC circuit deteriorate, the electromagnetic noise emitted increased according to our analysis. The results show that the proposed method can be used to diagnose possible failures in the early stage, and it can help the improvement of the electromagnetic reliability in future mobility.
EMC Filter Drift Induced by Thermal Aging : Efficient Source Identification and Component Level Accelerated Aging Test
Matthieu Laidet1,2, Alexandre Boyer2,3, Julien Gazave1, Sonia Ben Dhia2,3
1EDF Power Networ Lab, France; 2LAAS CNRS, France; 3INSA Toulouse, France
This paper presents the use of combined thermal step stress and fixed-temperature accelerated aging tests. VNA measurements are used to look for EMC level drifts. Step stress at EMC filter level reveals a deviation in common mode attenuation. A component is identified as the drift’s source and a fixed-temperature aging test is performed on it. Key points ensuring the validity of the results are discussed. Extraction of an aging law is considered. Perspectives and limits are presented.
Degradation Characteristics of EMI Suppression Film Capacitors Under Combined Electro-Thermal-Humidity Stress and Their Impact on EMI Filter Performance
The electromagnetic interference (EMI) suppression capacitor is an important component of the EMI filter. The degradation of these film capacitors under combined electro-thermal-humidity stress is a significant concern, which may cause deviations in the cut-off frequency or the filtering bandwidth and impact the capability of the EMI filter. This paper investigates the degradation of X2 EMI suppression film capacitors. Two types of commercially 1 uF X2 capacitors are tested under relative humidity 85 %, temperature 85 °C, and voltage rated conditions. The test results are given by the measured capacitance data and the equivalent series resistance (ESR). A single-phase CLC EMI filter for a PFC inverter is used as a case study to evaluate the impact of capacitor degradation on filter performance using Monte Carlo simulation method. The findings demonstrate significant changes in gain and resonance frequencies due to capacitor degradation. This study provides valuable insights into the degradation characteristics of EMI suppression film capacitors under combined stress condition, emphasizing the importance of incorporating degradation effects into EMI filter design to ensure long-term electromagnetic compatibility and system reliability in power electronic applications.
Investigation of Radiated EMI Evolution of High-power Density GaN-based Converter Under Short-circuit Accelerated Aging
1LATIS- Laboratory of Advanced Technology and Intelligent Systems Université de Sousse, Ecole Nationale d’Ingénieurs de Sousse / Sousse, Tunisia; 2Université Rouen Normandie / ESIGELEC / IRSEEM , 76000 Rouen, France
Gallium Nitride (GaN) transistors have garnered significant attention in power electronics due to their superior efficiency. However, persistent reliability challenges remain, particularly under extreme operational conditions. This study investigates the evolution of radiated electromagnetic interference (EMI) in a high-power density GaN-based converter subjected to short-circuit accelerated aging. The experimental setup replicates real-world stress by exposing the converter to repeated short-circuit events, enabling the evaluation of key electrical parameter degradation. A notable increase in near-field EMI emissions was observed, correlating with changes in parasitic capacitances. The results reveal a reduction in gate-drain capacitance (CGD), leading to higher dv/dt, which intensified high-frequency harmonics and EMI emissions. Simultaneously, gate-source capacitance (CGS) increased, impacting gate drive stability and switching dynamics. Similarly, reverse transfer capacitance (CRSS) decreased, accelerating switching transitions and further contributing to EMI.