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Influence of gate drive circuit for power device on EMI noise characteristics in a phase-leg topology
Takaaki Ibuchi, Tsuyoshi Funaki
Osaka University, Japan
Fast and high-frequency switching operation of wide-bandgap power semiconductor devices such as Silicon carbide (SiC) and Gallium nitride (GaN) could cause severe electromagnetic interference (EMI) noise problem in high and wide frequency range. This report experimentally investigates the dependency of gate drive circuit configuration on EMI noise characteristics of SiC-based half-bridge converter.
EMC Focused Half-Bridge Characterization and Modeling
Julian Dobusch, Philipp Konarski, Daniel Kuebrich, Thomas Duerbaum
Friedrich-Alexander University of Erlangen-Nüremberg, Germany
Power electronic circuits are a major source of Electromagnetic Compatibility (EMC) problems. The increased switching speed of modern semiconductor devises based on Silicon Carbide (SiC) and Gallium Nitride (GaN) further aggravates this issue. Thus, the importance of including EMC aspects in the design phase of a power electronic circuit is high and a reliable simulation model is very useful for rapid circuit testing and identification of the source of interference. However, the influence of parasitic components represents a crucial part of the coupling paths and thus has to be considered. This paper covers the development of a highly accurate simulation model including these parasitics. A major concern is the measurement of coupling capacitances which form an essential contribution to the model.
Modeling and Analysis of Near-Field Radiated Emission in Wide Bandgap Power Modules
Asif Imran Emon, Balaji Narayanasamy, Tristan Mark Evans, Fang Luo, H. Alan Mantooth
University of Arkansas, United States of America
Recent advances in wide band gap power devices has resulted in increasing power density for power converters. Near field models of power modules are essential to design better packaging of other auxiliary circuits in a power converter. A simplified power module like structure is considered. The entire power module is then sub divided into simpler geometries and modeled separately. The overall map of near field is then obtained from these simple geometries. The result from the simulation and measurement has been compared to the modeled map to validate the model.
Determining crucial sources of conducted interference in power electronics from heat sink capacitive coupling
Stephan Fink, Klaus F. Hoffmann, Stefan Dickmann
Helmut Schmidt University Hamburg, Germany
In power electronics, wide band gap materials enable faster transients and higher switching frequencies. Therefore, more efficient power electronic systems can be realized, but also greater EMC problems in magnitude and frequency arise. Heat sinks, which are often necessary for cooling power semiconductors, are a well known source of EMC issues. In this paper, crucial sources of conducted interference from capacitive coupling via the heat sink are determined and approaches to reduce this conducted interference are discussed. For the investigations, a combined approach using simulation as well as circuit diagram analysis was used. Three different topologies were investigated to obtain general recommendations to reduce interference caused by heat sink capacitive coupling.
Synthesis of an Optimized Control Signal for an Improved EMC Switching Behavior of MOSFETs Using a System Characterization Approach
Caroline Krause, Andreas Bendicks, Tobias Dörlemann, Stephan Frei
TU Dortmund University, Germany
Active gate control of MOSFETs is a common strategy to improve efficiency and/or electromagnetic compatibility (EMC) of power electronic systems. Finding an appropriate control method for specific requirements is no trivial task, and often there is a trade-off between efficiency and EMC. In this paper, a novel method is proposed that utilizes synthesized control signals. With signal synthesis methods, that can be realized affordable in future integrated circuits, signal shapes can be adjusted more or less arbitrarily. Various requirements, e.g. switching waveforms, overall system’s EMC or efficiency, can be aimed at this way. Here, a basic MOSFET circuit is investigated which should generate a specific switching waveform. This waveform shall improve the system’s EMC without significantly affecting the efficiency. The system is developed, characterized and a mathematical approximation is derived that respects the important temperature dependency. In this first demonstration, very low switching frequencies are considered that make the reactive elements of the MOSFET negligible. From the requirements and the system model, a suitable control signal can be derived. Measurement and simulation results show the good performance of the proposed method.